60V N-Channel MOSFETs

Symbol

Parameter

Rating

Units

Drain-Source Voltage

60

V

Gate-Sou

rce Voltage

±20

V

℃)

114

A

℃)

72

A

456

A

EAS

450

mJ

IAS

95

A

℃)

183

W

Power Dissipation – Derate above 25

℃

1.47

W/

℃

Storage Temperature Range

-50 to 150

℃

Operating Junction Temperature Range

-50 to 150

℃

BVDSS

RDSON

ID

60V

4.5m

Ω

114A

Symbol

Parameter

Typ.

Max.

Unit

Thermal Resistance Junction to ambient

---

62

℃/W

Thermal Resistance Junction to Case

---

0.68

℃/W

These N-Channel enhancement mode power field effect

transistors are using trench DMOS technology. This

advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are

well suited for high efficiency fast switching applications.

 60V,114A, RDS(ON) =4.5m

Ω@VGS = 10V

 Improved dv/dt capability

 Fast switching

 Green Device Available

General Description

Features

Applications

Thermal Characteristics

TO-220 Pin Configuration

 PowerTools

 Quick Charger

 LED applications

 Motor Drive Applications

1

1. Gate

2. Drain

3. Source

3

2

D

G

S

2018. 11. 19

1/5

Revision No : 0

SEMICONDUCTOR

TECHNICAL DATA

FTK6902P