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FTK6906D Datasheet(PDF) 2 Page - First Silicon Co., Ltd

Part # FTK6906D
Description  60V N-Channel MOSFETs
PDF  5 Pages
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Manufacturer  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK6906D Datasheet(HTML) 2 Page - First Silicon Co., Ltd

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60V N-Channel MOSFETs
Off Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
60
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.07
---
V/℃
IDSS
Drain-Source Leakage Current
VDS=60V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=48V , VGS=0V , TJ=125℃
---
---
10
uA
IGSS
Gate-Source Leakage Current
VGS=± 20V , VDS=0V
---
---
±
100
nA
On Characteristics
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V , ID=20A
---
17
21
mΩ
VGS=4.5V , ID=12A
---
20
24
mΩ
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.2
1.8
2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
5
---
mV/℃
gfs
Forward Transconductance
VDS=10V , ID=10A
---
9
---
S
Dynamic and switching Characteristics
Qg
Total Gate Charge2 , 3
VDS=30V , VGS=10V , ID=15A
---
28
42
nC
Qgs
Gate-Source Charge2 , 3
---
3.5
7
Qgd
Gate-Drain Charge2 , 3
---
6.5
10
Td(on)
Turn-On Delay Time2 , 3
VDD=30V , VGS=10V , RG=6Ω
ID=1A
---
7.2
14
ns
Tr
Rise Time2 , 3
---
38
72
Td(off)
Turn-Off Delay Time2 , 3
---
34
65
Tf
Fall Time2 , 3
---
8.2
16
Ciss
Input Capacitance
VDS=20V , VGS=0V , F=1MHz
---
1680
2440
pF
Coss
Output Capacitance
---
115
170
Crss
Reverse Transfer Capacitance
---
85
125
Rg
Gate resistance
VGS=0V, VDS=0V, F=1MHz
---
2.2
4.4
Ω
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
38
A
ISM
Pulsed Source Current
---
---
152
A
VSD
Diode Forward Voltage
VGS=0V , IS=1A , TJ=25℃
---
---
1
V
trr
Reverse Recovery Time2
VGS=0V,IS=-1A , dI/dt=100A/µs
TJ=25℃
---
19.6
---
ns
Qrr
Reverse Recovery Charge2
---
14.2
---
nC
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Drain-Source Diode Characteristics and Maximum Ratings
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
VDD=25V,VGS=10V,L=0.1mH,IAS=29A.,RG=25Ω, Starting TJ=25℃.
3.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
4.
Essentially independent of operating temperature.
2018. 07. 16
2/5
Revision No : 0
FTK6906D



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