2SC2632 datasheet(1/2 Pages) PANASONIC

Part #	2SC2632

Description	Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)

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Manufacturer	PANASONIC [Panasonic Semiconductor]

Direct Link	http://www.panasonic.com/industrial/

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Transistor

2SC2632

Silicon NPN epitaxial planer type

For low-frequency high breakdown voltage amplification

Complementary to 2SA1124

s Features

q

Satisfactory linearity of forward current transfer ratio hFE.

q

High collector to emitter voltage VCEO.

q

Small collector output capacitance Cob.

s Absolute Maximum Ratings (Ta=25˚C)

Unit: mm

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power dissipation

Junction temperature

Storage temperature

1:Emitter

2:Collector

3:Base

EIAJ:SC–51

TO–92L Package

5.9

±0.2

2.54

±0.15

0.7

±0.1

4.9

±0.2

0.45

+0.2

–0.1

1.27

0.45

+0.2

–0.1

13

2

Symbol

VCBO

VCEO

VEBO

ICP

IC

PC

Tj

Tstg

Ratings

150

5

100

50

1

150

–55 ~ +150

Unit

V

mA

W

˚C

s Electrical Characteristics (Ta=25˚C)

Parameter

Collector cutoff current

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Transition frequency

Collector output capacitance

Noise voltage

Symbol

ICBO

VCEO

VEBO

hFE

*

VCE(sat)

fT

Cob

NV

Conditions

VCB = 100V, IE = 0

IC = 0.1mA, IB = 0

IE = 10µA, IC = 0

VCE = 5V, IC = 10mA

IC = 30mA, IB = 3mA

VCB = 10V, IE = –10mA, f = 200MHz

VCB = 10V, IE = 0, f = 1MHz

VCE = 10V, IC = 1mA, GV = 80dB

Rg = 100kΩ, Function = FLAT

min

150

5

130

typ

160

150

max

1

330

1

3

300

Unit

µA

V

MHz

pF

mV

*h

FE Rank classification

Rank

R

S

hFE

130 ~ 220

185 ~ 330

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2SC2632 Datasheet(PDF) 1 Page - Panasonic Semiconductor

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