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FTV05CUDFN1006 Datasheet(PDF) 2 Page - First Silicon Co., Ltd |
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FTV05CUDFN1006 Datasheet(HTML) 2 Page - First Silicon Co., Ltd |
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2 / 3 page ![]() Parameter Symbol Value Units Peak Pulse Power(tp=8/20µs) Lead Soldering Temperature Operating Temperature Range Storage Temperature Range PPP TL TJ TSTG 100 260(10 sec.) -55~150 -55~150 Watts ℃ ℃ ℃ Parameter Symbol Conditions Units Min. Typ. Max. FTV05CUDFN1006(Marking: E ) Reverse Stand-off Voltage Breakdown Voltage Reverse Leakage Current Junction Capacitance Clamping Voltage IR CI/O VRWM VBR VC 5 9.5 15 1 I =1mA T I =1A,tp=8/20µs PP I =4A,tp=8/20µs PP @VRWM 5.6 V V V V µA F p 0Vdc,f=1MHz Between I/O Pins and GND 0.9 Fig.2 Pulse Waveform 5 0 10 30 15 0 10 Time( ) µs 20 25 20 30 40 50 60 70 80 90 100 110 t =I /2 d PP Waveform Parameters: tr=8µs t =20µs d e-1 Fig.1 Non-Repetitive Pulse Power vs.Pulse Time 0 1 0.01 Pulse Duration-tp( ) µs 10 0.1 1 100 1000 10 0.6 Maximum Ratings(TA=25℃ unless otherwise specified) Electrical Characteristics(TA=25℃ unless otherwise specified) Ratings and Characteristic Curves 2019. 08. 07 2/3 Revision No : 0 FTV05CUDFN1006 |
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