LM2301M datasheet(2/4 Pages) LEIDITECH

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Drain-source breakdown voltage

V (BR)DSS

VGS = 0V, ID =-250μA

-20

Zero gate voltage drain current

IDSS

VDS =-20V,VGS = 0V

-1

μA

Gate-body leakage current

IGSS

VGS =±1

0V, VDS = 0V

±20

μA

Gate threshold voltage (note 2)

VGS(th)

VDS =VGS, ID =-250μA

-0.35

-0.45

VGS =-4.5V, ID =-1A

430

520

VGS =-2.5V, ID =-0.8A

624

Drain-source on-resistance (note 2)

RDS(on)

VGS =-1.8V, ID =-0.5A

950

Forward transconductance (note 2)

gFS

VDS =-10V, ID =-0.54A

1.2

Diode forward voltage

VSD

IS=-0.5A, VGS = 0V

-1.2

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Input capacitance

Ciss

113

170

Output capacitance

Coss

Reverse transfer capacitance

Crss

VDS =-16V,VGS =0V,f =1MHz

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Turn-on delay time

(note 3)

td(on)

Turn-on rise time

(note 3)

5.8

Turn-off delay time

(note3)

td(off)

32.7

Turn-off fall time

(note 3)

VGS=-4.5V,VDS=-10V,

ID =-200mA,RGEN=10

20.3

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1. Surface mounted on FR4 board using the minimum recommended pad size.

2. Pulse Test : Pulse Width=300μs, Duty Cycle=2%.

3. Switching characteristics are independent of operating junction temperatures.

4. Guaranteed by design, not subject to producting.

T =25

unless otherwise specified

750

LM2301M

Rev 2.0 :

www.leiditech.com

12.01.2019

2/4

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