LM3134KT datasheet(1/4 Pages) LEIDITECH

Part #	LM3134KT

Description	N-Channel Enhancement Mode Fidld Effect Transistor

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

Direct Link	http://www.leiditech.com

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Product Summary

● VDS

20V

● ID

0.75A

● RDS(ON)( at VGS=4.5V)

＜

250 mohm

● RDS(ON)( at VGS=2.5V)

＜

350 mohm

● ESD Protected Up to 3.0KV (HBM)

General Description

● Trench Power LV MOSFET technology

Applications

● Load/Power Switching

● Interfacing Switching

● Logic Level Shift

■

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-source Voltage

VDS

20

V

Gate-source Voltage

VGS

±

12

V

Drain Current

TA=25℃ @ Steady State

ID

0.75

A

TA=70℃ @ Steady State

0.6

Pulsed Drain Current A

IDM

3.0

A

Total Power Dissipation @ TA=25℃

PD

0.15

W

Thermal Resistance Junction-to-Ambient @ Steady State

RθJA

833

℃/

W

Junction and Storage Temperature Range

TJ ,TSTG

-55～+150

℃

■

Ordering Information (Example)

PREFERED P/N

PACKING

CODE

Marking

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs) DELIVERY MODE

LM3134KT

KF

8000

7“ reel

Enhancement Mode Fidld Effect Transistor

N-Channel

LM3134KT

Rev :

www.leiditech.com

01.06.2018

1/4

Moisture Sensitivity: Level 3 per J-STD-020

● High Power and current handing capability

●

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LM3134KT Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

LM3134KT Datasheet(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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