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MMBT5550 Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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MMBT5550 Datasheet(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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1 / 5 page  MMBT5551 MMBT5551 160 — = 0) MMBT5550 140 — MMBT5550 M1F 3000/Tape&Reel MMBT5550 MMBT5551 High Voltage Transistors MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 140 Vdc Collector–Base Voltage V CBO 160 Vdc Emitter–Base Voltage V EBO 6.0 Vdc Collector Current — Continuous I C 600 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR– 5 Board, (1) PD 225 mW TA = 25°C Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient RθJA 556 °C/W Total Device Dissipation PD 300 mW Alumina Substrate, (2) TA = 25°C Derate above 25°C 2.4 mW/°C Thermal Resistance, Junction to Ambient RθJA 417 °C/W Junction and Storage Temperature TJ ,Tstg –55 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(3) V (BR)CEO Vdc (I C = 1.0 mAdc, I B Collector–Base Breakdown Voltage V (BR)CBO Vdc (I C = 100 µAdc, I E = 0) MMBT5550 160 — MMBT5551 180 — Emitter–Base Breakdown Voltage V (BR)EBO Vdc (I E = 10 µAdc, I C = 0) 6.0 — Collector Cutoff Current I CBO ( V CB = 100Vdc, I E = 0) MMBT5550 — 100 nAdc ( V CB = 120Vdc, I E = 0) MMBT5551 — 50 ( V CB = 100Vdc, I E = 0, T A=100 °C) MMBT5550 — 100 µAdc ( V CB = 120Vdc, I E = 0, T A=100 °C) MMBT5551 — 50 Emitter Cutoff Current I EBO — 50 nAdc ( V BE = 4.0Vdc, I C= 0) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%. 2 EMITTER 3 COLLECTOR 1 BASE FEATURE DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping MMBT5550 M1F 10000/Tape&Reel MMBT5551 G1 3000/Tape&Reel G1 10000/Tape&Reel We declare that the material of product compliance with RoHS requirements. Dimensions SOT-23 Pin Configuration Rev : www.leiditech.com 01.06.2015 5/5 |
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