SI7635DP datasheet(3/8 Pages) VBSEMI

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

100

0.0

0.5

1.0

1.5

2.0

VGS =10thr u 5 V

VGS = 3 V

VDS - Drain-to-Source Voltage (V)

0.00

0.0

204060

100

VGS =10 V

VGS =4.5 V

ID - Drain Current (A)

100

150

200

VDS =22.5 V

ID =28 A

VDS =7.5 V

VDS =15 V

Qg - Total Gate Charge (nC)

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.0

0.5

1.0

1.5

2.0

2.5

3.0

TC = 25 °C

TC = 125 °C

VDS - Drain-to-Source Voltage (V)

TC = - 55 °C

6000

7000

8000

Ciss

Coss

Crss

VDS -Drain-to-Source Voltage (V)

0.6

0.9

1.2

1.5

1.8

- 50

- 25

100

125

150

VGS =10 V

VGS =4.5 V

ID =20A

TJ -Junction Temperature (°C)

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SI7635DP

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