1

Transistor

2SC3130

Silicon NPN epitaxial planer type

For high-frequency amplification/oscillation/mixing

q

q

q

Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

Unit: mm

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

1:Base

JEDEC:TO–236

2:Emitter

EIAJ:SC–59

3:Collector

Mini Type Package

2.8

+0.2

–0.3

1.5

+0.25

–0.05

0.65

±0.15

0.65

±0.15

3

1

2

0.4

±0.2

0.1 to 0.3

Symbol

Ratings

15

10

3

50

150

150

–55 ~ +150

Unit

V

V

V

mA

mW

˚C

˚C

Parameter

Collector cutoff current

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Transition frequency

Collector output capacitance

Base time constant

Common emitter reverse transfer capacitance

Symbol

*

∆h

FE

Conditions

min

10

3

75

1.4

0.75

typ

200

1.9

1.4

11

0.45

max

1

400

0.5

2.5

1.6

Unit

µA

V

V

V

GHz

pF

ps

pF

Marking symbol :

1S

Rank

P

Q

R

75 ~ 130

110 ~ 220

200 ~ 400

Marking Symbol

1SP

1SQ

1SR