© Semiconductor Components Industries, LLC, 2016

April, 2019 − Rev. 12

Publication Order Number:

BAT54SWT1/D

1

BAT54SW

Dual Series Schottky

Barrier Diodes

These Schottky barrier diodes are designed for high speed switching

applications, circuit protection, and voltage clamping. Extremely low

forward voltage reduces conduction loss. Miniature surface mount

package is excellent for hand held and portable applications where

space is limited.

Features

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

Compliant

Rating

Symbol

Value

Unit

Reverse Voltage

30

V

Total Power Dissipation

Derate above 25°C

200

1.6

mW

mW/°C

Forward Current (DC)

200

mA

Non−Repetitive Peak Forward Current

600

mA

Repetitive Peak Forward Current

Pulse Wave = 1 sec,

Duty Cycle = 66%

300

mA

Junction Temperature

−55 to 125

°C

Storage Temperature Range

−55 to +150

°C

Electrostatic Discharge

ESD

HM < 8000

MM < 400

V

V

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

www.onsemi.com

30 VOLT

DUAL SERIES SCHOTTKY

BARRIER DIODES

3

CATHODE/ANODE

1

ANODE

2

CATHODE

Device

Package

ORDERING INFORMATION

BAT54SWT1G

SOT−323

(Pb−Free)

3,000 /

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

SOT−323

CASE 419

STYLE 9

MARKING DIAGRAM

B8M G

G

B8

= Device Code

M

= Date Code*

G

= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending up-

on manufacturing location.

1

NSVBAT54SWT1G

SOT−323

(Pb−Free)

3,000 /

Tape & Reel