LM2102W datasheet(1/5 Pages) LEIDITECH

Part #	LM2102W

Description	N-ChannelEnhancement Mode Field Effect Transistor

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

Direct Link	http://www.leiditech.com

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1 / 5 page

Product Summary

● VDS

20V

● ID

2.5A

● RDS(ON)( at VGS=4.5V)

＜70 mohm

● RDS(ON)( at VGS=2.5V)

＜98 mohm

General Description

● Trench Power LV MOSFET technology

● High Power and current handing capability

Applications

● PWM application

● Load switch

■ Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-source Voltage

VDS

20

V

Gate-source Voltage

VGS

±10

V

Drain Current

TA=25℃ @ Steady State

ID

2.5

A

TA=70℃ @ Steady State

2.0

Pulsed Drain Current A

IDM

14

A

Total Power Dissipation @ TA=25℃

PD

0.7

W

Thermal Resistance Junction-to-Ambient @ Steady State B

RθJA

178

℃/ W

Junction and Storage Temperature Range

TJ ,TSTG

-55～+150

℃

■ Ordering Information (Example)

PREFERED P/N

PACKING

CODE

Marking

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

DELIVERY MODE

LM 2102W

F2

TS2

3000

7“ reel

Enhancement Mode Field Effect Transistor

N-Channel

LM2102W

Rev :

www.leiditech.com

01.06.2018

1/5

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LM2102W Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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