PARAMET

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

800

V

Gate-Source Voltage

±30

V

Avalanche Current (Note 1)

5.0

A

5.0

A

Continuous Drain Current

3.0

Pulsed Drain Current (Note 1)

20

A

Single Pulse(Note 2)

320

mJ

Avalanche Energy

Peak Diode Recovery dv/dt (Note 3)

dv/dt

4.5

V/ns

142 / 48

W

Power Dissipation (TO-220,TO-263/ TO-220F)

Derate above 25°C

1.14 / 0.38

W / ˚C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

UNIT

62.5

Junction-to-Ambient

1.0

Junction-to-Case

TO-220, TO-263

˚C / W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

UNIT

OFF CHARACTERISTICS

800

V

Drain-Source Breakdown Voltage

10

µ

A

Drain-Source Leakage Current

Forward

100

nA

Gate-Body Leakage Current

Reverse

-100

nA

µ

A, Referenced to

25°C

0.93

V / ˚C

ON CHARACTERISTICS

Gate Threshold Voltage

2.0

4.0

V

Static Drain-Source On-Resistance

2.7

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

1020

pF

Output Capacitance

77

pF

Reverse Transfer Capacitance

f = 1.0MHz

10.3

pF

2013. 01. 03

2/8

FTK5N80P/F/DD

Revision No : 0

Junction Temperature

+150

˚C

-55 ~ +150

˚C

MAX

Operating and Storage Temperature

SWITCHING CHARACTERISTICS

Turn-On Delay Time

(Note 4,5)

ns

Turn-On Rise Time

85

ns

Turn-Off Fall Time

30

ns

Total Gate Charge

21

nC

Gate-Source Charge

(Note 4,5)

3.2

nC

Turn-Off Delay Time

Gate-Drain Charge

78

nC

MIN

TYP

MAX

Forward Transconductance

5.5

S

50

120

ns

TO-220F

3.12