HFP640 datasheet(1/5 Pages) DOINGTER

Part #	HFP640

Description	N-Channel MOSFET uses advanced trench technology

PDF	5 Pages

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Manufacturer	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

Direct Link	http://www.doingter.cn/

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Description：

This N-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) VDS=200V,ID=18A,RDS(ON)<165mΩ@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra Iow RDS(ON).

5) Excellent package for good heat dissipation.

Absolute Maximum Ratings：(T

A=25℃ unless otherwise noted)

Symbol

Parameter

Ratings

Units

VDS

Drain-Source Voltage

200

V

VGS

Gate-Source Voltage

±20

V

ID

Continuous Drain Current-TC=25℃

G

18

A

Continuous Drain Current-TC=100℃

13

EAS

Single Pulse Avalanche Energy

125

mJ

IDM

C

45

A

IAS

9.5

A

PD

Power Dissipation,

TC=25℃

212

W

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

℃

Thermal Characteristics：

Symbol

Parameter

Max

Units

RƟJC

Thermal Resistance,Junction to Case

0.59

℃/W

Drain Current - Pulsed

Avalanche Current (L=10mH)

C

B

(Steady-State)

D S

G

HFP640

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HFP640 Datasheet(PDF) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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