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LCE2302 Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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LCE2302 Datasheet(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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1 / 6 page  LCE2302 Description The LCE2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 20V,ID =4A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● Battery protection ● Load switch ● Power management D G S Schematic diagram 1 3 2 G D S 2302 Marking and pin assignment SOT-23 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 2302 LCE2302 SOT-23 Ø180mm 8 mm 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous ID 4 A Drain Current-Pulsed (Note 1) IDM 10 A Maximum Power Dissipation PD 1 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 125 /W ℃ Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 20 22 - V Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V - - 1 μA LCE N-Channel Enhancement Mode Power MOSFET Rev : www.leiditech.com 01.06.2015 1/6 |
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