BAT854SW datasheet(3/8 Pages) PHILIPS

3 / 8 page

2001 Feb 27

Philips Semiconductors

Product speciﬁcation

Schottky barrier (double) diodes

BAT854W series

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

ELECTRICAL CHARACTERISTICS

Tamb =25 °C; unless otherwise speciﬁed.

Note

1. Pulse test: tp = 300 µs; δ = 0.02.

THERMAL CHARACTERISTICS

Note

1. Refer to SOT323 standard mounting conditions.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per diode

continuous reverse voltage

−

continuous forward current

−

200

IFRM

repetitive peak forward current

tp ≤ 1s; δ≤ 0.5

−

300

IFSM

non-repetitive peak forward current

t = 8.3 ms half sinewave;

JEDEC method

−

Tstg

storage temperature

−65

+150

°C

junction temperature

−

150

°C

Tamb

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

Per diode

continuous forward voltage

see Fig.6

IF = 0.1 mA

200

−

IF = 1 mA

260

−

IF = 10 mA

340

−

IF =30mA

−

420

IF = 100 mA

−

550

continuous reverse current

VR = 25 V; note 1; see Fig.7

−

0.5

µA

diode capacitance

VR = 1 V; f = 1 MHz; see Fig.8

−

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient note 1

625

K/W

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