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LMS2302AL Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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LMS2302AL Datasheet(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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1 / 3 page  SOT-23 場效應晶體管(SOT-23 Field Effect Transistors) N-Channel Enhancement-Mode MOS FETs N 沟道增强型 MOS 场效应管 ■ MAXIMUM RATINGS 最大額定值 Characteristic 特性參數 Symbol 符號 Max 最大值 Unit 單位 Drain-Source Voltage 漏極-源極電壓 BVDSS 20 V Gate- Source Voltage 栅極-源極電壓 VGS +8 V Drain Current (continuous) 漏極電流-連續 ID 2.6 A Drain Current (pulsed) 漏極電流-脉冲 IDM 10 A Total Device Dissipation 總耗散功率 TA =25℃環境溫度爲 25℃ PD 900 mW Junction 結溫 TJ 150 ℃ Storage Temperature 儲存溫度 Tstg -55to+150 ℃ LMS2302AL Rev : www.leiditech.com 01.06.2015 1/3 |
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