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ZXMP6A17GTC Datasheet(PDF) 4 Page - VBsemi Electronics Co.,Ltd

Part # ZXMP6A17GTC
Description  P-Channel 60-V (D-S) MOSFET
PDF  7 Pages
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Manufacturer  VBSEMI [VBsemi Electronics Co.,Ltd]
Direct Link  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

ZXMP6A17GTC Datasheet(HTML) 4 Page - VBsemi Electronics Co.,Ltd

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Gate Charge
Source-Drain Diode Forward Voltage
Single Pulse Avalanche Current Capability vs. Time
I
D =5A
0
2
4
6
8
10
020
40
60
80
Qg - Total Gate Charge (nC)
V
DS =30 V
V
DS =20 V
0.0
0.3
0.6
0.9
1.2
T
J = 150 °C
10
VSD - Source-to-Drain Voltage (V)
1
100
T
J = 25 °C
0.0001
1000
10
1
0.1
1
Tin - (s)
0.001
0.01
0.1
100
I
AV (A) at TJ = 25 °C
I
AV (A) at TJ = 150 °C
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Gate-to-Source Voltage
Drain-Source Breakdown Voltage vs. Junction Temperature
0.5
0.8
1.1
1.4
1.7
2.0
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
I
D = 2 A
V
GS =4.5 V
V
GS =10 V
0.00
0.02
0.04
0.06
0.08
0.10
02
4
6
8
10
VGS - Gate-to-Source Voltage (V)
TJ = 25 °C
TJ = 150 °C
ID =2A
60
63
66
69
72
75
- 50
- 25
0
25
50
75
100
125
150
ID = 10 mA
TJ - Temperature (°C)
E-mail：China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
ZXMP6A17GTC
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