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CY7C1001
CY7C1002
PRELIMINARY
4
Data Retention Characteristics Over the Operating Range (L Version Only)
Commercial
Military
Parameters
Description
Conditions[10]
Min.
Max.
Min.
Max.
Units
VDR
VCC for Retention Data
2.0
2.0
V
ICCDR
Data Retention Current
VCC = VDR = 2.0V,
CE >VCC 03V
50
70
mA
tCDR[5]
Chip Deselect to Data Retention Time
CE > VCC - 0.3V,
VIN > VCC - 0.3V or
0
0
ns
tR[5]
Operation Recovery Time
VIN > VCC - 0.3V or
VIN < 0.3V
tRC
tRC
ns
Note:
10. No input may exceed VCC + 0.5V.
Data Retention Waveform
4.5V
4.5V
CE
VCC
tCDR
VDR > 2V
DATA RETENTION MODE
tR
C1001-5
Switching Waveforms
Read Cycle No. 1[11, 12]
PREVIOUS DATA VALID
DATA VALID
tRC
tAA
tOHA
ADDRESS
DATA OUT
C1001-6
Read Cycle No. 2[12, 13]
C1001-7
50%
50%
DATA VALID
tRC
tACE
tLZCE
tPU
HIGH IMPEDANCE
IMPEDANCE
ICC
ISB
tHZCE
tPD
HIGH
ADDRESS
CE
DATA OUT
VCC
SUPPLY
CURRENT
Notes:
11. Device is continuously selected, CE = VIL.
12. WE is HIGH for read cycle.
13. Address valid prior to or coincident with CE transition LOW.
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