LMP0218G datasheet(1/6 Pages) LEIDITECH

Part #	LMP0218G

Description	Excellent gate charge x RDS(on) product(FOM)

PDF	6 Pages

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Manufacturer	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

Direct Link	http://www.leiditech.com

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1 / 6 page

Description

The LMP0218G uses

Super Trench

technology that is

uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

switching power losses are minimized due to an extremely low

combination of RDS(ON) and Qg. This device is ideal for

high-frequency switching and synchronous rectification.

Application

●

DC/DC Converter

●

Ideal

for

high-frequency switching

and

synchronous

rectification

General Features

●

VDS =200V,ID =18A

RDS(ON)=70mΩ (typical) @ VGS=10V

●

Excellent gate charge x RDS(on) product(FOM)

●

Very low on-resistance RDS(on)

●

150 °C operating temperature

●

Pb-free lead plating

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

200

V

Gate-Source Voltage

VGS

±20

V

Drain Current-Continuous

ID

18

A

Drain Current-Continuous(TC=100 )

℃

ID (100℃)

12.6

A

Pulsed Drain Current

IDM

72

A

Maximum Power Dissipation

PD

105

W

Derating factor

0.84

W/℃

Single pulse avalanche energy

(Note 5)

EAS

180

mJ

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 150

℃

Thermal Characteristic

Thermal Résistance, Junction-to-Case

(Note 2)

RθJC

1.2

/W

℃

Bottom View

Top View

DFN 5X6

Schematic Diagram

LMP0218G

DFN5X6-8L

-

LMP0218G

Super Ternch Power MOSFET

N-Channel

Rev :

www.leiditech.com

01.06.2018

1/6

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LMP0218G Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

LMP0218G Datasheet(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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