1. FEATURES

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Low Profile DFN 2.0x2.0x0.62 mm for Board Space Saving

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Ultra Low RDS(on)

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2.APPLICATIONS

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3. ORDERING INFORMATION

4. MAXIMUM RATINGS(Ta = 25ºC unless otherwise stated)

V

V

A

A

PD

TJ , TSTG

W

ID

IDM

TL

260

Parameter

Symbol

Limits

Unit

ESD

2000

V

+150

Drain−to−Source Voltage

VDSS

Gate−to−Source Voltage

VGS

−55 ~

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

This is a Pb-Free Device

Device

Marking

Shipping

32

We declare that the material of product are Halogen Free and

compliance with RoHS requirements.

Battery Switch

High Side Load Switch

Gate−Source ESD Rating

(HBM, Method 3015)

1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)

Operating Junction and Storage

Power Dissipation (Note 1)

Pulsed Drain Current (tp = 10 µs)

Drain Current (Note 1)Steady State

Temperature Range

t < 7 s

Steady State

20

1.4

3.0

4000/Tape&Reel

32 = Device Code

Y = Date Code*

LM8012P

±8

18

8

Enhancement Mode Power MOSFET

P-Channel

LM8012P

Rev :

www.leiditech.com

01.06.2019

1/6

°C

°C