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FTK55P02DFN33 Datasheet(PDF) 2 Page - First Silicon Co., Ltd

Part # FTK55P02DFN33
Description  P-Channel Enhancement Mode Field Effect Transistor
PDF  5 Pages
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Manufacturer  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK55P02DFN33 Datasheet(HTML) 2 Page - First Silicon Co., Ltd

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Electrical Characteristics (TJ=25℃ unless otherwise noted)
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Static Parameter
Drain-Source Breakdown Voltage
BVDSS
VGS= 0V, ID=250μA
-20
V
Zero Gate Voltage Drain Current
IDSS
VDS=-20V,VGS=0V
1
μA
Gate-Body Leakage Current
IGSS
VGS= ±10V, VDS=0V
±100
nA
V
e
g
a
tl
o
V
d
l
o
h
s
e
r
h
T
e
t
a
G
GS(th)
VDS= VGS, ID=-250μA
-0.4
-0.62
-1.0
V
Static Drain-Source On-Resistance
RDS(ON)
VGS= -4.5V, ID=-15A
6.5
8.3
mΩ
VGS= -2.5V, ID=-10A
8.0
10.0
VGS= -1.8V, ID=-8.0A
10.3
15
V
e
g
a
tl
o
V
d
r
a
w
r
o
F
e
d
o
i
D
SD
IS=-20A,VGS=0V
-0.7
-1.2
V
Maximum Body-Diode Continuous Current
IS
A
5
5
-
Dynamic Parameters
C
e
c
n
a
ti
c
a
p
a
C
t
u
p
n
I
iss
VDS=-10V,VGS=0V,f=1MHZ
3150
pF
C
e
c
n
a
ti
c
a
p
a
C
t
u
p
t
u
O
oss
5
2
6
Reverse Transfer Capacitance
Crss
5
5
5
Switching Parameters
Q
e
g
r
a
h
C
e
t
a
G
l
a
t
o
T
g
VGS=-4.5V,VDS=-10V,ID=-20A
45
nC
Q
e
g
r
a
h
C
e
c
r
u
o
S
-
e
t
a
G
gs
1
.
8
Q
e
g
r
a
h
C
n
i
a
r
D
-
e
t
a
G
gd
5
.
1
1
Q
e
g
r
a
h
C
y
r
e
v
o
c
e
R
e
s
r
e
v
e
R
rr
IF=-12A, di/dt=100A/us
26
t
e
m
i
T
y
r
e
v
o
c
e
R
e
s
r
e
v
e
R
rr
9
2
ns
t
e
m
i
T
y
a
l
e
D
n
o
-
n
r
u
T
D(on)
VGS=-4.5V,VDD=-10V, ID=-12A,RL=1Ω
RGEN=3Ω
15
t
e
m
i
T
e
s
i
R
n
o
-
n
r
u
T
r
1
2
t
e
m
i
T
y
a
l
e
D
ff
o
-
n
r
u
T
D(off)
6
9
t
e
m
i
T
ll
a
f
ff
o
-
n
r
u
T
f
6
6
1
A. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%.
B. Tj=25℃, VDD=20V, VG=10V, L=0.5mH, Rg=25Ω
2020. 04. 21
2/5
Revision No : 0
FTK55P02DFN33



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