2SC4985 datasheet(1/2 Pages) PANASONIC

Part #	2SC4985

Description	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

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Manufacturer	PANASONIC [Panasonic Semiconductor]

Direct Link	http://www.panasonic.com/industrial/

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Power Transistors

2SC4985

Silicon NPN triple diffusion planar type

For high breakdown voltage high-speed switching

s Features

q

High collector to base voltage VCBO

q

High collector to emitter VCEO

q

Allowing automatic insertion with radial taping

s Absolute Maximum Ratings (Ta=25˚C)

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

ICP

IC

PC

Tj

Tstg

Ratings

900

800

7

2

1

1.5

150

–55 to +150

Unit

V

A

W

˚C

s Electrical Characteristics (Ta=25˚C)

Parameter

Collector cutoff current

Emitter cutoff current

Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Turn-on time

Storage time

Fall time

Symbol

ICBO

IEBO

VCEO

hFE1

hFE2

VCE(sat)

VBE(sat)

fT

ton

tstg

tf

Conditions

VCB = 900V, IE = 0

VEB = 7V, IC = 0

IC = 1mA, IB = 0

VCE = 5V, IC = 50mA

VCE = 5V, IC = 500mA

IC = 200mA, IB = 40mA

VCB = 10V, IE = –50mA, f = 200MHz

IC = 200mA, IB1 = 40mA, IB2 = –80mA,

VCC = 250V

min

800

6

3

typ

80

max

50

1.5

1

3

1

Unit

µA

V

MHz

µs

Unit: mm

1:Emitter

2:Collector

3:Base

MT3 Type Package

7.5

±0.2

4.5

±0.2

90

°

0.8C

0.4

±0.1

0.8C

123

0.5

±0.1

0.7

±0.1

1.0

±0.1

0.85

±0.1

0.65

±0.1

0.7

±0.1

2.5

±0.2

2.5

±0.2

2.05

±0.2

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2SC4985 Datasheet(PDF) 1 Page - Panasonic Semiconductor

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