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SI4554DY Datasheet(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Part # SI4554DY
Description  N-Chanel and P-Channel MOSFET useadvanced trench Technology
PDF  8 Pages
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Manufacturer  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

SI4554DY Datasheet(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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N-Channel Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
ON/Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
40
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=40V
---
---
1
μA
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0A
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
1
1.5
2
V
RDS(ON)
Drain-Source On Resistance
VGS=10V,ID=8A
---
14
mΩ
VGS=4.5V,ID=4A
---
GFS
Forward Transconductance
VDS=5 V, ID=8A
---
---
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS=20V, VGS=0V, f=1MHz
---
415
pF
Coss
Output Capacitance
---
112
Crss
Reverse Transfer Capacitance
---
11
Switching Characteristics
td(on)
Turn-On Delay Time
---
4
ns
tr
Rise Time
---
3
ns
td(off)
Turn-Off Delay Time
---
15
ns
tf
Fall Time
---
2
ns
Qg
Total Gate Charge
---
12
nC
Qgs
Gate-Source
Charge
---
3.2
nC
Qgd
Gate-Drain “Miller” Charge
4
---
3.1
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
3
VGS=0V,IS=8A
---
0.8
1.2
V
www.doingter.cn
19
19
35
33
---
---
---
---
---
---
---
VDD=20V, RL=2.5Ω
VGS=10V,RGEN=3Ω
VDS=20V,ID=8A,
VGS=10V
---
---
---
4
3
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t ≤ 10 sec.
3.
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2 .
%
4.
Guaranteed by design, not subject to production
Si4554DY



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