1

Power Transistors

2SC5037, 2SC5037A

Silicon NPN triple diffusion planar type

For high breakdown voltage high-speed switching

q

High-speed switching

q

q

Wide area of safe operation (ASO)

q

q

Full-pack package with outstanding insulation, which can be in-

stalled to the heat sink with one screw

Parameter

Collector to

base voltage

Collector to

emitter voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Base current

Collector power

dissipation

Junction temperature

Storage temperature

Symbol

Ratings

900

1000

900

1000

800

7

5

3

1

40

2

150

–55 to +150

Unit

V

V

V

V

A

A

A

W

˚C

˚C

2SC5037A

2SC5037A

Ta=25

°C

Parameter

Collector cutoff

current

Emitter cutoff current

Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Turn-on time

Storage time

Fall time

Symbol

Conditions

min

800

8

6

typ

10

max

50

50

50

1.5

1.5

0.7

2.5

0.3

Unit

µA

µA

µA

V

V

V

MHz

µs

µs

µs

2SC5037A

Unit: mm

1:Base

2:Collector

3:Emitter

TO–220E Full Pack Package

9.9

±0.3

23

1

4.6

±0.2

2.9

±0.2

2.6

±0.1

2.54

±0.2

0.75

±0.1

1.2

±0.15

5.08

±0.4

φ3.2±0.1

1.45

±0.15

0.7

±0.1

7

°