TSM9409CSRL datasheet(4/9 Pages) VBSEMI

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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

Gate Charge

Source Drain Diode Forward Voltage

Threshold Voltage

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Drain Source Breakdown vs. Junction Temperature

g - Total Gate Charge (nC)

D = 5 A

DS = 30 V

0.001

0.01

0.1

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

SD - Source-to-Drain Voltage (V)

J = 25 °C

J = 150 °C

- 0.3

- 0.1

0.1

0.3

0.5

0.7

0.9

- 50

- 25

100

125

150

175

J - Temperature (°C)

D = 250 μA

D = 5 mA

0.5

0.8

1.1

1.4

1.7

2.0

- 50

- 25

100

125

150

175

J - Junction Temperature (°C)

D = 3.5 A

GS = 4.5 V

GS = 10 V

0.0

0.1

0.2

0.3

0.4

0.5

GS - Gate-to-Source Voltage (V)

J = 150 °C

J = 25 °C

- 80

- 75

- 70

- 65

- 60

- 50

- 25

100

125

150

175

J - Junction Temperature (°C)

D = 1 mA

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TSM9409CS RL

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