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2SC5335 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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2SC5335 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
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1 / 2 page ![]() 1 Transistor 2SC5335(Tentative) Silicon NPN epitaxial planer type For low-frequency output amplification s Features q High foward current transfer ratio hFE. q Low collector to emitter saturation voltage VCE(sat). s Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Emitter 2:Collector 3:Base MT2 Type Package 2.5 ±0.1 2.5 ±0.5 2.5±0.5 6.9 ±0.1 1.05 ±0.05 (1.45) 4.0 0.7 0.8 0.65 max. 0.45 +0.1 –0.05 3 2 1 Symbol VCBO VCEO VEBO ICP IC PC *1 Tj Tstg Ratings 60 50 15 1.5 0.7 1.0 150 –55 ~ +150 Unit V V V A A W ˚C ˚C s Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO ICEO VCBO VCEO VEBO hFE *1 VCE(sat) fT Cob Conditions VCB = 20V, IE = 0 VCE = 20V, IB = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 150mA IC = 500mA, IB = 50mA VCB = 10V, IE = –10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min 60 50 15 400 typ 0.15 200 11 max 1 10 2000 0.4 15 Unit µA µA V V V V MHz pF *1 Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion *1h FE Rank classification Rank R S T hFE 400 ~ 800 600 ~ 1200 1000 ~ 2000 1.2 ±0.1 0.65 max. 0.45 0.1 0.05 + – Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. (HW type) |
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