STP413D datasheet(1/4 Pages) DOINGTER

Part #	STP413D

Description	P-Channel MOSFET uses advanced trench technology

PDF	4 Pages

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Manufacturer	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

Direct Link	http://www.doingter.cn/

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Description：

This P-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) VDS=-40V,ID=-36A,RDS(ON)<21mΩ@VGS=-10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON).

5) Excellent package for good heat dissipation.

Absolute Maximum Ratings：(T

C=25℃ unless otherwise noted)

Symbol

Parameter

Ratings

Units

VDS

Drain-Source Voltage

-40

V

VGS

Gate-Source Voltage

±20

V

ID

Continuous Drain Current

-36

A

Continuous Drain Current-TC=100℃

-25

IDM

Pulsed Drain Current

1

-144

PD

Power Dissipation TC=25℃

60

mJ

Power Dissipation TC=100℃

30

W

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +175

℃

Thermal Characteristics：

Symbol

Parameter

Max

Units

RƟJC

Thermal Resistance,Junction to Case

1

2.5

℃/W

D

G

D

S

STP413D

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STP413D Datasheet(PDF) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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