2SC5591 datasheet(1/1 Pages) PANASONIC

Part #	2SC5591

Description	Silicon NPN triple diffusion mesa type(For horizontal deflection output)

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Manufacturer	PANASONIC [Panasonic Semiconductor]

Direct Link	http://www.panasonic.com/industrial/

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Power Transistors

2SC5591

Silicon NPN triple diffusion mesa type

For horizontal deflection output

I Features

• High breakdown voltage: 1700 V; supporting a large screen CRT

and wider visible angle

• High-speed switching: t

f < 0.2 µs

• Low Collector to emitter saturation voltage: V

CE(sat) < 3 V

• Wide area of safe operation (ASO)

I Absolute Maximum Ratings T

C = 25°C

Unit: mm

Parameter

Symbol

Rating

Unit

Collector to base voltage

VCBO

1 700

V

Collector to emitter voltage

VCES

1 700

V

VCEO

600

V

Emitter to base voltage

VEBO

7V

Peak collector current

ICP

30

A

Collector current

IC

20

A

Base current

IB

11

A

Collector power

TC = 25°CPC

70

W

dissipation

Ta

= 25°C

3.5

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

I Electrical Characteristics T

C = 25°C ± 3°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector cutoff current

ICBO

VCB

= 1 000 V, I

E

= 050

µA

VCB

= 1 700 V, I

E

= 01

mA

Emitter cutoff current

IEBO

VEB = 7 V, IC = 050

µA

Forward current transfer ratio

hFE

VCE

= 5 V, I

C

= 10 A

6

12

Collector to emitter saturation voltage

VCE(sat)

IC

= 10 A, I

B

= 2.5 A

3

V

Base to emitter saturation voltage

VBE(sat)

IC = 10 A, IB = 2.5 A

1.5

V

Transition frequency

fT

VCE

= 10 V, I

C

= 0.1 A, f = 0.5 MHz

3

MHz

Storage time

tstg

IC

= 10 A, Resistance loaded

3.0

µs

Fall time

tf

IB1 = 2.5 A, IB2 = −5.0 A

0.2

µs

1: Base

2: Collector

3: Emitter

TOP-3E Package

Internal Connection

B

C

E

Marking Symbol: C5591

15.5±0.5

3.0±0.3

(4.0)

2.0±0.2

1.1±0.1

5.45±0.3

0.7±0.1

5˚

10.9±0.5

1

5˚

23

φ 3.2±0.1

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