2SC5622 datasheet(1/1 Pages) PANASONIC

Part #	2SC5622

Description	Silicon NPN triple diffusion mesa type(For horizontal deflection output)

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Manufacturer	PANASONIC [Panasonic Semiconductor]

Direct Link	http://www.panasonic.com/industrial/

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Power Transistors

2SC5622

Silicon NPN triple diffusion mesa type

For horizontal deflection output

I Features

• High breakdown voltage: 1 500 V

• High-speed switching

• Wide area of safe operation (ASO)

I Absolute Maximum Ratings T

C = 25°C

Unit: mm

Parameter

Symbol

Rating

Unit

Collector to base voltage

VCBO

1 500

V

Collector to emitter voltage

VCES

1 500

V

Emitter to base voltage

VEBO

7V

Peak collector current

ICP

12

A

Collector current

IC

6

A

Base current

IB

3

A

Collector power

TC

= 25°CP

C

40

W

dissipation

Ta

= 25°C3

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

I Electrical Characteristics T

C = 25°C ± 3°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector cutoff current

ICBO

VCB

= 1 000 V, I

E

= 050

µA

VCB

= 1 500 V, I

E

= 01

mA

Emitter to base voltage

VEBO

IE = 500 mA, IC = 07

V

Forward current transfer ratio

hFE

VCE

= 5 V, I

C

= 4 A

5

9

Collector to emitter saturation voltage

VCE(sat)

IC

= 4 A, I

B

= 0.8 A

5

V

Base to emitter saturation voltage

VBE(sat)

IC = 4 A, IB = 0.8 A

1.5

V

Transition frequency

fT

VCE

= 10 V, I

C

= 0.1 A, f = 0.5 MHz

3

MHz

Diode forward voltage

VF

IF

= 4 A

−2V

Storage time

tstg

IC = 4 A, Resistance loaded

5.0

µs

Fall time

tf

IB1

= 0.8 A, I

B2

= −1.6 A

0.5

µs

1: Base

2: Collector

3: Emitter

TOP-3E Package

Internal Connection

Marking Symbol: C5622

15.5±0.5

3.0±0.3

(4.0)

2.0±0.2

1.1±0.1

5.45±0.3

0.7±0.1

5˚

10.9±0.5

1

5˚

23

φ 3.2±0.1

B

C

E

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