FDMC3612 datasheet(2/10 Pages) ONSEMI

2 / 10 page

FDMC3612, FDMC3612−L701

www.onsemi.com

MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Symbol

Parameter

Rating

Unit

VDS

Drain to Source Voltage

100

VGS

Gate to Source Voltage

±20

Drain Current

Continuous (Package limited)

TC = 25°C

Continuous (Silicon limited)

TC = 25°C

Continuous (Note 1a)

TA = 25°C

3.3

Pulsed

EAS

Single Pulse Avalanche Energy (Note 2)

Power Dissipation

TC = 25°C

Power Dissipation (Note 1a)

TA = 25°C

2.3

TJ, TSTG Operating and Storage Junction Temperature Range

−55 to + 150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Symbol

Parameter

Rating

Unit

RqJC

Thermal Resistance, Junction to Case

3.5

°C/W

RqJA

Thermal Resistance, Junction to Ambient (Note 1a)

1. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. RqJC is guaranteed

by design while RqCA is determined by the user’s board design.

a. 53°C/W when mounted on a 1 in2 pad

of 2 oz copper

b. 125°C/W when mounted on a minimum

pad of 2 oz copper

2. Starting TJ = 25°C; N−ch: L = 1 mH, IAS = 8 A, VDD = 90 V, VGS = 10 V.

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