SSP7462N datasheet(2/7 Pages) VBSEMI

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Notes

a. Pulse test; pulse width

 300 μs, duty cycle  2 %

b. Guaranteed by design, not subject to production testing

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-source breakdown voltage

VDS

VGS = 0 V, ID = 250 μA

VDS temperature coefficient

V

DS/TJ

ID = 250 μA

-33

mV/°C

VGS(th) temperature coefficient

V

GS(th)/TJ

--4.8-

Gate-source threshold voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.8

Gate-source leakage

IGSS

VDS = 0 V, VGS = ± 20 V

100

Zero gate voltage drain current

IDSS

VDS = 60 V, VGS = 0 V

μA

VDS = 60 V, VGS = 0 V, TJ = 70 °C

On-state drain current a

ID(on)

VDS  5 V, VGS =10 V

Drain-source on-state resistance a

RDS(on)

VGS =10 V, ID = 10 A

0.024



VGS = 4.5 V, ID = 5 A

0.028

Forward transconductance a

gfs

VDS = 10 V, ID = 10 A

Dynamic b

Input capacitance

Ciss

VDS = 30 V, VGS = 0 V, f = 1 MHz

790

Output capacitance

Coss

330

Reverse transfer capacitance

Crss

-14

Total gate charge

VDS = 30 V, VGS = 10 V, ID = 5 A

11.1

VDS = 30 V, VGS = 4.5 V, ID = 5 A

-5.2

Gate-source charge

Qgs

-2.2

Gate-drain charge

Qgd

-1.1

Gate resistance

f = 1 MHz

0.1

0.6

1.2



Turn-on delay time

td(on)

VDD = 30 V, RL = 6 , ID  5 A,

VGEN = 10 V, Rg = 1 

-7

Rise time

-21

Turn-off delay time

td(off)

-10

Fall time

-10

Turn-on delay time

td(on)

VDD = 30 V, RL = 6 , ID  5 A,

VGEN = 4.5 V, Rg = 1 

-13

Rise time

-25

Turn-off delay time

td(off)

-10

Fall time

-22

Drain-Source Body Diode Characteristics

Continuous source-drain diode current

TC = 25 °C

Pulse diode forward current

ISM

Body diode voltage

VSD

IS = 5 A, VGS = 0 V

0.79

1.2

Body diode reverse recovery time

trr

IF = 5 A, di/dt = 100 A/μs, TJ = 25 °C

-30

Body diode reverse recovery charge

Qrr

120

Reverse recovery fall time

-15

Reverse recovery rise time

-15

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SSP7462N

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