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SWP3710 Datasheet(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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SWP3710 Datasheet(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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2 / 3 page ![]() Forward On Voltage www.doingter.cn — 2 — Electrical Characteristics:(T C=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 100 --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=100V --- --- 10 μA VGS=0V, VDS=100V,Tj=125℃ --- --- 250 IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±0.2 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 2 --- 4 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=1A --- 18 22 mΩ GFS Forward Transconductance VDS=15V, ID=10A, --- --- 25 S VSD --- --- 1.3 V Dynamic Characteristics Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz --- 2900 --- pF Coss Output Capacitance --- 290 --- Crss Reverse Transfer Capacitance --- 150 --- Switching Characteristics td(on) Turn-On Delay Time VDD=50V, ID=35A, RGEN=6.8Ω.VGS=10V --- 17 --- ns tr Rise Time --- 77 --- ns td(off) Turn-Off Delay Time --- 41 --- ns tf Fall Time --- 56 --- ns VGS=0V IS=35A TJ=25℃ --- Δ ID=1A SWP3710 |
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