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UI6008 Datasheet(PDF) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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UI6008 Datasheet(HTML) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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3 / 4 page ![]() www.doingter.cn — 3 — Is Conti nuous Source Current Vg=Vd=0V --- --- 11 A Ism Pul s ed Source Current --- --- 44 A Qrr Reverse Recovery Cha rge --- 14.3 --- NS Trr Reverse Recovery Ti me --- 23.2 --- NC Notes: Typical Characteristics: (T C=25℃ unless otherwise noted) GS =30V,IS=1A , dI/dt=100A/µs 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=25V,VGS=10V,L=1mH,IAS=7A.,RG=25,Starting TJ=25℃ 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. TJ , Junction Temperature (℃) Fig.1 Continuous Drain Current vs. TC TC , Case Temperature (℃) TJ , Junction Temperature (℃) Fig.2 Normalized RDSON vs. TJ Fig.3 Normalized Vth vs. TJ Fig.4 Gate Charge Characteristics Qg , Gate Charge (nC) UI6008 |
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