UTD408L-K08-3030-R datasheet(3/4 Pages) DOINGTER

Part #	UTD408L-K08-3030-R

Description	N-Channel MOSFET uses advanced trench technology

PDF	4 Pages

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Manufacturer	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

Direct Link	http://www.doingter.cn/

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Qgs

Ga te-Source Charge

3.4

VDS=15V , VGS=4.5V ,

ID=6A

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Qgd

Ga te-Drain “Miller” Charge

3.4

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2.1

Drain-Source Diode Characteristics

VSD

Source-Drain Diode Forward Voltage

VGS=0V , IS=1A , TJ=25℃

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0.7

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lsmr

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Notes:

Typical Characteristics： (T

C=25℃ unless otherwise noted)

Continuous Source Current

Pulsed Source Current

VG=VD=0V , Force Current

VGS=0V , IS=1A , TJ=25℃

Repetitive Rating : Pulsed width limited by maximum junction temperature.

VDD=25V,VGS=10V,L=1mH,IAS=8A.,RG=25,Starting TJ=25℃.

The data tested by pulsed , pulse width

≦ 300us , duty cycle ≦ 2%.

Essentially independent of operating temperature.

Fig.1 Continuous Drain Current vs. TC

Fig.3 Normalized Vth vs. TJ

Fig.2 Normalized RDSON vs. TJ

Fig.4 Gate Charge Waveform

TC , Case Temperature (℃)

TJ , Junction Temperature (℃)

Qg , Gate Charge (nC)

UTD408L-K08-3030-R

UTD408L-K08-3030-R Datasheet(PDF) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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