SSM3K43FS datasheet(2/5 Pages) TOSHIBA

2 / 5 page

SSM3K43FS

2014-03-01

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Conditions

Min

Typ.

Max

Unit

V (BR) DSS

ID = 1 mA, VGS = 0

⎯

Drain-source breakdown voltage

V (BR) DSX

ID = 1 mA, VGS = - 10 V

⎯

Drain cutoff current

IDSS

VDS = 20 V, VGS = 0

⎯

μA

Gate leakage current

IGSS

VGS = ±8 V, VDS = 0

⎯

±1

μA

Gate threshold voltage

Vth

VDS = 3 V, ID = 1 mA

0.35

⎯

1.0

Forward transfer admittance

|Yfs|

VDS = 3 V, ID = 200 mA

(Note2)

420

840

⎯

ID = 200 mA, VGS = 5.0 V (Note2)

⎯

0.46

0.63

ID = 200 mA, VGS = 4.5 V (Note2)

⎯

0.51

0.66

ID = 200 mA, VGS = 2.5 V (Note2)

⎯

0.66

0.85

ID = 100 mA, VGS = 1.8 V (Note2)

⎯

0.81

1.14

Drain-source ON-resistance

RDS (ON)

ID = 50 mA, VGS = 1.5 V

(Note2)

⎯

0.95

1.52

Input capacitance

Ciss

⎯

Output capacitance

Coss

⎯

10.8

⎯

Reverse transfer capacitance

Crss

VDS = 10 V, VGS = 0 V, f = 1 MHz

⎯

7.3

⎯

Total Gate Charge

⎯

1.23

⎯

Gate

−Source Charge

Qgs

⎯

0.60

⎯

Gate

−Drain Charge

Qgd

VDS = 10 V, ID = 0.5 A

VGS = 4.0 V

⎯

0.63

⎯

Turn-on time

ton

⎯

Switching time

Turn-off time

toff

VDD = 10 V, ID = 200 mA

VGS = 0 to 2.5 V, RG = 50 Ω

⎯

Drain-source forward voltage

VDSF

ID = -0.5 A, VGS = 0 V

(Note2)

⎯

-0.88

-1.2

Note2: Pulse test

Switching Time Test Circuit

Usage Considerations

Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (1 mA for the

SSM3K43FS). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than

Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).

Take this into consideration when using the device.

Handling Precaution

When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is

protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that

come into direct contact with devices should be made of antistatic materials.

2.5 V

ton

toff

0 V

VDD

VDS (ON)

10%

90%

10%

(a) Test Circuit

VDD = 10 V

RG = 50 Ω

Duty

≤ 1%

VIN: tr, tf < 5 ns

Common Source

= 25°C

2.5 V

OUT

VDD

μs

(b) VIN

SSM3K43FS Datasheet(PDF) 2 Page - Toshiba Semiconductor

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