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VX80M60PWHM3/P Datasheet(PDF) 1 Page - Vishay Siliconix |
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VX80M60PWHM3/P Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 5 page ![]() VX80M100PW www.vishay.com Vishay General Semiconductor Revision: 29-Jul-2020 1 Document Number: 87009 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.44 V at IF = 10 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s per JESD 22-B106 • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection in commercial, industrial, and automotive application. MECHANICAL DATA Case: TO-247AD 3L Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 Polarity: as marked Mounting torque: 10 in-lbs maximum Note (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RθJA PRIMARY CHARACTERISTICS IF(AV) 2 x 40 A VRRM 100 V IFSM 550 A VF at IF = 40 A (TJ = 125 °C) 0.66 V TJ max. 175 °C Package TO-247AD 3L Circuit configuration Common cathode TO-247AD 3L 1 3 2 PIN 1 PIN 2 CASE PIN 3 Available MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VX80M100PW UNIT Maximum repetitive peak reverse voltage VRRM 100 V Maximum average forward rectified current (fig. 1) per device IF(AV) 80 A per diode 40 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 550 A Operating junction temperature range TJ (1) -40 to +175 °C Storage temperature range TSTG -40 to +175 |
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