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VX80M60PWHM3/P Datasheet(PDF) 1 Page - Vishay Siliconix

Part # VX80M60PWHM3/P
Description  Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.44 V at IF = 10 A
PDF  5 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

VX80M60PWHM3/P Datasheet(HTML) 1 Page - Vishay Siliconix

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VX80M100PW
www.vishay.com
Vishay General Semiconductor
Revision: 29-Jul-2020
1
Document Number: 87009
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier
Ultra Low VF = 0.44 V at IF = 10 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C maximum,
10 s per JESD 22-B106
• AEC-Q101 qualified available:
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection in commercial, industrial, and
automotive application.
MECHANICAL DATA
Case: TO-247AD 3L
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
Base
P/NHM3
-
halogen-free,
RoHS-compliant,
and
AEC-Q101 qualified
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
Polarity: as marked
Mounting torque: 10 in-lbs maximum
Note
(1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RθJA
PRIMARY CHARACTERISTICS
IF(AV)
2 x 40 A
VRRM
100 V
IFSM
550 A
VF at IF = 40 A (TJ = 125 °C)
0.66 V
TJ max.
175 °C
Package
TO-247AD 3L
Circuit configuration
Common cathode
TO-247AD 3L
1
3
2
PIN 1
PIN 2
CASE
PIN 3
Available
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VX80M100PW
UNIT
Maximum repetitive peak reverse voltage
VRRM
100
V
Maximum average forward rectified current
(fig. 1)
per device
IF(AV)
80
A
per diode
40
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
550
A
Operating junction temperature range
TJ (1)
-40 to +175
°C
Storage temperature range
TSTG
-40 to +175


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