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TEPL5Z5.0M Datasheet(PDF) 2 Page - Rectron Semiconductor |
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TEPL5Z5.0M Datasheet(HTML) 2 Page - Rectron Semiconductor |
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2 / 4 page ![]() Symbol Parameter Value Units VESD ESD per IEC 61000-4-2 (Air) ESD per IEC 61000-4-2 (Contact) ±30 ±30 kV PPP Peak Pulse Power (8/20s) 128 W TOPT Operating Temperature -40~150 qC TSTG Storage Temperature -40~150 qC Symbol Parameter Test Condition Min Typ Max Units VRWM Reverse Working Voltage 5.0 V VBR Reverse Breakdown Voltage IT IR Reverse Leakage Current VRWM = 5V 1.0 A VC Clamping Voltage IPP = 5A, tp = 8/20s 11.6 V VC Clamping Voltage IPPmax = 8A , tp = 8/20s 16.0 V CJ Junction Capacitance VR = 0V, f = 1MHz 10 15 pF ABSOLUTE MAXIMUM RATING (Tamb=25°C, unless otherwise specified) ELECTRICAL CHARACTERISTICS (Tamb=25°C,unless otherwise specified) = 1mA 5.6 9.0 V |
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