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MMG75S170B6TC Datasheet(PDF) 2 Page - MacMic

Part # MMG75S170B6TC
Description  1700V 75A IGBT Module
PDF  6 Pages
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Manufacturer  MACMIC [MacMic]
Direct Link  https://macmicst.com.tw
Logo MACMIC - MacMic

MMG75S170B6TC Datasheet(HTML) 2 Page - MacMic

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Unit
mA
mA
nA
Ω
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
MMG75S170B6TC
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T
C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
Min.
Typ.
Max.
VGE(th)
Gate Emitter Threshold Voltage
VCE=VGE, IC=3mA
5.0
5.8
6.5
V
VCE(sat)
Collector Emitter
Saturation Voltage
IC=75A, VGE=15V, TJ=25℃
2.15
2.6
IC=75A, VGE=15V, TJ=125℃
2.35
IC=75A, VGE=15V, TJ=150℃
2.45
ICES
Collector Leakage Current
VCE=1700V, VGE=0V, TJ=25℃
1
VCE=1700V, VGE=0V, TJ=150℃
10
IGES
Gate Leakage Current
VCE=0V,VGE=±15V, TJ=25℃
-500
500
Rgint
Integrated Gate Resistor
7
Qg
Gate Charge
VCE=900V, IC=75A , VGE=15V
0.55
Cies
Input Capacitance
VCE=25V, VGE=0V, f =1MHz
7.1
Cres
Reverse Transfer Capacitance
220
td(on)
Turn on Delay Time
VCC=900V,IC=75A
RG =7.5Ω,
VGE=±15V,
Inductive Load
TJ=25℃
120
TJ=150℃
150
tr
Rise Time
TJ=25℃
65
TJ=150℃
70
td(off)
Turn off Delay Time
VCC=900V,IC=75A
RG =7.5Ω,
VGE=±15V,
TJ=25℃
480
TJ=150℃
520
t
Fll Ti
TJ=25℃
200
2
ns
mJ
mJ
mJ
mJ
mJ
mJ
K /W
Unit
ns
A
µC
mJ
K /W
Inductive Load
tf
Fall Time
J
TJ=150℃
360
Eon
Turn on Energy
VCC=900V,IC=75A
RG =7.5Ω,
VGE=±15V,
Inductive Load
TJ=25℃
29
TJ=125℃
36
TJ=150℃
39
Eoff
Turn off Energy
TJ=25℃
10
TJ=125℃
17
TJ=150℃
19
ISC
Short Circuit Current
tpsc≤10µS , VGE=15V
TJ=150℃,VCC=900V
360
A
RthJC
Junction to Case Thermal Resistance （ Per IGBT）
0.27
Diode-inverter
ELECTRICAL CHARACTERISTICS (T
C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
Min.
Typ.
Max.
VF
Forward Voltage
IF=75A , VGE=0V, TJ=25℃
1.8
2.2
V
IF=75A , VGE=0V, TJ=125℃
1.9
IF=75A , VGE=0V, TJ=150℃
1.9
trr
Reverse Recovery Time
IF=75A , VR=900V
dIF/dt=-1800A/μs
TJ =150℃
600
IRRM
Max. Reverse Recovery Current
110
QRR
Reverse Recovery Charge
37.3
Erec
Reverse Recovery Energy
17.6
RthJCD
Junction to Case Thermal Resistance （ Per Diode）
0.48
22



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