CC2652R datasheet(11/58 Pages) TI

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7.6 Power Consumption - Radio Modes

When measured on the CC26x2R74EM-7ID reference design with Tc = 25 °C, VDDS = 3.0 V with DC/DC enabled unless

otherwise noted.

PARAMETER

TEST CONDITIONS

TYP

UNIT

Radio receive current

2440 MHz

7.1

Radio transmit current

2.4 GHz PA (Bluetooth Low Energy)

0 dBm output power setting

2440 MHz

7.6

+5 dBm output power setting

2440 MHz

9.9

7.7 Nonvolatile (Flash) Memory Characteristics

Over operating free-air temperature range and VDDS = 3.0 V (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Flash sector size

Supported flash erase cycles before failure, single-bank(1) (5)

k Cycles

Supported flash erase cycles before failure, single sector(2)

k Cycles

Maximum number of write operations per row before sector

erase(3)

Write

Operations

Flash retention

105 °C

11.4

Years at 105

°C

Flash sector erase current

Average delta current

10.7

Flash sector erase time(4)

Zero cycles

30k cycles

4000

Flash write current

Average delta current, 4 bytes at a time

6.2

Flash write time(4)

4 bytes at a time

21.6

µs

(1)

A full bank erase is counted as a single erase cycle on each sector

(2)

Up to 4 customer-designated sectors can be individually erased an additional 30k times beyond the baseline bank limitation of 30k

cycles

(3)

Each wordline is 2048 bits (or 256 bytes) wide. This limitation corresponds to sequential memory writes of 4 (3.1) bytes minimum

per write over a whole wordline. If additional writes to the same wordline are required, a sector erase is required once the maximum

number of write operations per row is reached.

(4)

This number is dependent on Flash aging and increases over time and erase cycles

(5)

Aborting flash during erase or program modes is not a safe operation.

7.8 Thermal Resistance Characteristics

THERMAL METRIC(1)

PACKAGE

UNIT

RGZ

(VQFN)

48 PINS

RθJA

Junction-to-ambient thermal resistance

23.4

°C/W(2)

RθJC(top)

Junction-to-case (top) thermal resistance

13.3

°C/W(2)

RθJB

Junction-to-board thermal resistance

8.0

°C/W(2)

ψJT

Junction-to-top characterization parameter

0.1

°C/W(2)

ψJB

Junction-to-board characterization parameter

7.9

°C/W(2)

RθJC(bot)

Junction-to-case (bottom) thermal resistance

1.7

°C/W(2)

(1)

For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics.

(2)

°C/W = degrees Celsius per watt.

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CC2652R7

SWRS253 – MAY 2021

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