Silicon SPDT Switch,

Reflective, 35 GHz to 44 GHz

Preliminary Technical Data

ADRF5301

Rev. PrB

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FEATURES

Reflective design

Low insertion loss: 1.8 dB at 44 GHz

High isolation: 28 dB at 44 GHz

High input linearity

0.1 dB power compression (P0.1dB): 37 dBm

Third-order intercept (IP3): 52 dBm

High RF power handling:

28 dBm average

36 dBm peak

Single supply operation: 3.3V

Internal negative voltage generator (NVG)

RF settling time (0.1 dB final RF output): 45 ns

20-terminal, 3 mm × 3 mm, land grid array package

Pin compatible with the ADRF5300: 24 GHz - 32 GHz

APPLICATIONS

Industrial scanner

Test instrumentation

Cellular infrastructure mmWave 5G

Military radios, radars, electronic counter measures (ECMs)

Microwave radios and very small aperture terminals (VSATs)

FUNCTIONAL BLOCK DIAGRAM

Figure 1.

GENERAL DESCRIPTION

The ADRF5301 is a reflective, single-pole, double-throw

(SPDT) switch manufactured in the silicon process.

The ADRF5301 was developed for 5G applications from 35 GHz

to 44 GHz. This device has low insertion loss of 1.8 dB, high

isolation of 28 dB, and radio frequency (RF) input power

handling capability of 28 dBm average and 36 dBm peak.

The ADRF5301 incorporates a negative voltage generator

(NVG) to operate with a single positive supply of 3.3 V applied

to the VDD pin. The devices employs complementary metal-

oxide semiconductor (CMOS)-/low voltage transistor to

transistor logic (LVTTL)-compatible control.

The ADRF5301 is pin-compatible with the ADRF5300, which

operates from 24 GHz to 32 GHz.

The ADRF5301 comes in a 20-terminal, 3 mm × 3 mm, RoHS-

compliant, land grid array (LGA) package and can operate from

−40°C to +105°C.

RF2

RF1

RFC

GND

CTRL

VDD

DRIVER

NVG

ADRF5301