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KVR16LS11K2/8 Datasheet(PDF) 1 Page - Kingston Technology Far East Co. Ltd |
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KVR16LS11K2/8 Datasheet(HTML) 1 Page - Kingston Technology Far East Co. Ltd |
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1 / 2 page  KVR16LS11K2/8 8GB (4GB 1Rx8 512M x 64-Bit x 2pcs.) PC3L-12800 CL11 204-Pin SODIMM Kit DESCRIPTION This document describes ValueRAM's kit of two 512M x 64-bit (4GB) DDR3L-1600 CL11 SDRAM (Synchronous DRAM), 1Rx8, low voltage, memory module, based on eight 512M x 8-bit FBGA components. Total kit capacity is 8GB. The SPD is programmed to JEDEC standard latency DDR3-1600 timing of 11-11-11 at 1.35V or 1.5V. This 204-pin SODIMM uses gold contact fingers. The electrical and mechanical specifications are as follows: FEATURES • JEDEC standard 1.35V and 1.5V Power Supply • VDDQ = 1.35V and 1.5V • 800MHz fCK for 1600Mb/sec/pin • 8 independent internal bank • Programmable CAS Latency: 11, 10, 9, 8, 7, 6, 5 • 8-bit pre-fetch • Bi-directional Differential Data Strobe • Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%) • On Die Termination using ODT pin • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C • Asynchronous Reset • PCB: Height1.18” (30mm), double sided component • RoHS Compliant Document No. VALUERAM1570-001.C00 05/10/21 Page 1 Memory Module Specifications Continued >> SPECIFICATIONS s e l c y c 1 1 ) D D I ( L C Row Cycle Time (tRCmin) 48.125ns (min.) Refresh to Active/Refresh 260ns (min.) Command Time (tRFCmin) Row Active Time (tRASmin) 35ns (min.) 0 - V 4 9 g n it a R L U Operating Temperature 0o C to 85o C Storage Temperature -55o C to +100o C |
Similar Part No. - KVR16LS11K2/8 |
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Similar Description - KVR16LS11K2/8 |
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