SQJ204EP datasheet(2/15 Pages) VISHAY

2 / 15 page

SQJ204EP

www.vishay.com

Vishay Siliconix

S18-0487-Rev. A, 07-May-2018

Document Number: 76441

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SPECIFICATIONS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-source breakdown voltage

VDS

VGS = 0 V, ID = 250 μA

N-Ch 1

VGS = 0 V, ID = 250 μA

N-Ch 2

Gate-source threshold voltage

VGS(th)

VDS = VGS, ID = 250 μA

N-Ch 1

0.5

1.5

VDS = VGS, ID = 250 μA

N-Ch 2

0.5

1.5

Gate-source leakage

IGSS

VDS = 0 V, VGS = ± 20 V

N-Ch 1

± 100

N-Ch 2

± 100

Zero gate voltage drain current

IDSS

VGS = 0 V

VDS = 12 V

N-Ch 1

μA

VGS = 0 V

VDS = 12 V

N-Ch 2

VGS = 0 V

VDS = 12 V, TJ = 125 °C

N-Ch 1

VGS = 0 V

VDS = 12 V, TJ = 125 °C

N-Ch 2

VGS = 0 V

VDS = 12 V, TJ = 175 °C

N-Ch 1

300

VGS = 0 V

VDS = 12 V, TJ = 175 °C

N-Ch 2

300

On-state drain current a

ID(on)

VGS = 10 V

VDS  5 V

N-Ch 1

VGS = 10 V

VDS  5 V

N-Ch 2

Drain-source on-state resistance a

RDS(on)

VGS = 10 V

ID = 4 A

N-Ch 1

0.00675 0.00830



VGS = 10 V

ID = 10 A

N-Ch 2

0.00246 0.00300

VGS = 10 V

ID = 4 A, TJ = 125 °C

N-Ch 1

0.01250

VGS = 10 V

ID = 10 A, TJ = 125 °C

N-Ch 2

0.00470

VGS = 10 V

ID = 4 A, TJ = 175 °C

N-Ch 1

0.01460

VGS = 10 V

ID = 10 A, TJ = 175 °C

N-Ch 2

0.00560

VGS = 4.5 V

ID = 3 A

N-Ch 1

0.00755 0.00930

VGS = 4.5 V

ID = 8 A

N-Ch 2

0.00285 0.00350

VGS = 3.3 V

ID = 2 A

N-Ch 1

0.00835 0.01030

VGS = 3.3 V

ID = 5 A

N-Ch 2

0.00335 0.00410

Forward transconductance b

gfs

VDS = 10 V, ID = 4 A

N-Ch 1

VDS = 10 V, ID = 10 A

N-Ch 2

Dynamic b

Input capacitance

Ciss

VGS = 0 V

VDS = 6 V, f = 1 MHz

N-Ch 1

995

1400

VGS = 0 V

VDS = 6 V, f = 1 MHz

N-Ch 2

2687

3700

Output capacitance

Coss

VGS = 0 V

VDS = 6 V, f = 1 MHz

N-Ch 1

469

700

VGS = 0 V

VDS = 6 V, f = 1 MHz

N-Ch 2

1240

1700

Reverse transfer capacitance

Crss

VGS = 0 V

VDS = 6 V, f = 1 MHz

N-Ch 1

233

400

VGS = 0 V

VDS = 6 V, f = 1 MHz

N-Ch 2

619

900

Total gate charge c

VGS = 10 V

VDS = 6 V, ID = 2 A

N-Ch 1

12.3

VGS = 10 V

VDS = 6 V, ID = 4 A

N-Ch 2

32.3

Gate-source charge c

Qgs

VGS = 10 V

VDS = 6 V, ID = 2 A

N-Ch 1

1.8

VGS = 10 V

VDS = 6 V, ID = 4 A

N-Ch 2

4.9

Gate-drain charge c

Qgd

VGS = 10 V

VDS = 6 V, ID = 2 A

N-Ch 1

2.4

VGS = 10 V

VDS = 6 V, ID = 4 A

N-Ch 2

6.6

Gate resistance

f = 1 MHz

N-Ch 1

1.05

2.15

3.3



N-Ch 2

0.4

0.88

1.4

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