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MCP6V37T-E/MS Datasheet(PDF) 5 Page - Microchip Technology |
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MCP6V37T-E/MS Datasheet(HTML) 5 Page - Microchip Technology |
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5 / 50 page ![]() 2019 Microchip Technology Inc. DS20006209A-page 5 MCP6V36/6U/7/9 TABLE 1-2: AC ELECTRICAL SPECIFICATIONS Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, VCM = VDD/3, VOUT =VDD/2, VL =VDD/2, RL =100 kΩ to VL and CL = 20 pF (refer to Figure 1-4 and Figure 1-5). Parameters Sym. Min. Typ. Max. Units Conditions Amplifier AC Response Gain Bandwidth Product GBWP — 300 — kHz Slew Rate SR — 0.13 — V/µs Phase Margin PM — 70 — ° G = +1 Amplifier Noise Response Input Noise Voltage Eni —0.33 — µVP-P f = 0.01 Hz to 1 Hz Eni —1.0 — µVP-P f = 0.1 Hz to 10 Hz Input Noise Voltage Density eni —50 — nV/√Hz f < 2 kHz Input Noise Current Density ini —5 — fA/√Hz Amplifier Distortion (Note 1) Intermodulation Distortion (AC) IMD — 52 — µVPK VCM tone = 50 mVPK at 100 Hz, GN = 1 Amplifier Step Response Start Up Time tSTR — 2 — ms G = +1, 0.1% VOUT settling (Note 2) Offset Correction Settling Time tSTL — 100 — µs G = +1, VIN step of 2V, VOS within 100 µV of its final value Output Overdrive Recovery Time tODR — 120 — µs G = -10, ±0.5V input overdrive to VDD/2, VIN 50% point to VOUT 90% point (Note 3) Note 1: These parameters were characterized using the circuit in Figure 1-6. In Figure 2-33 and Figure 2-34, there is an IMD tone at DC, a residual tone at 100 Hz and other IMD tones and clock tones. 2: High gains behave differently; see Section 4.3.3, Offset at Power Up. 3: tODR includes some uncertainty due to clock edge timing. TABLE 1-3: TEMPERATURE SPECIFICATIONS Electrical Characteristics: Unless otherwise indicated, all limits are specified for: VDD = +1.8V to +5.5V, VSS = GND. Parameters Sym. Min. Typ. Max. Units Conditions Temperature Ranges Specified Temperature Range TA -40 — +125 °C Operating Temperature Range TA -40 — +125 °C (Note 1) Storage Temperature Range TA -65 — +150 °C Thermal Package Resistances Thermal Resistance, 5L-SC-70 JA —209 — °C/W Thermal Resistance, 5L-SOT-23 JA —201 — °C/W Thermal Resistance, 8L-2×3 TDFN θJA —53 — °C/W Thermal Resistance, 8L-MSOP θJA —211 — °C/W Thermal Resistance, 14L-TSSOP θJA —100 — °C/W Note 1: Operation must not cause TJ to exceed Maximum Junction Temperature specification (+150°C). |
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