2SD2467 datasheet(1/2 Pages) PANASONIC

Part #	2SD2467

Description	Silicon NPN epitaxial planar type(For power switching)

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Manufacturer	PANASONIC [Panasonic Semiconductor]

Direct Link	http://www.panasonic.com/industrial/

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Power Transistors

2SD2467

Silicon NPN epitaxial planar type

For power switching

s Features

q

Low collector to emitter saturation voltage VCE(sat)

q

Satisfactory linearity of foward current transfer ratio hFE

q

Large collector current IC

q

Full-pack package with outstanding insulation, which can be in-

stalled to the heat sink with one screw

s Absolute Maximum Ratings (T

C=25˚C)

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power

dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

ICP

IC

PC

Tj

Tstg

Ratings

130

80

7

6

3

30

2

150

–55 to +150

Unit

V

A

W

˚C

s Electrical Characteristics (T

C=25˚C)

Parameter

Collector cutoff current

Emitter cutoff current

Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Turn-on time

Storage time

Fall time

Symbol

ICBO

IEBO

VCEO

hFE1

hFE2

*

VCE(sat)

VBE(sat)

fT

ton

tstg

tf

Conditions

VCB = 100V, IE = 0

VEB = 5V, IC = 0

IC = 10mA, IB = 0

VCE = 2V, IC = 0.1A

VCE = 2V, IC = 0.5A

IC = 2A, IB = 0.1A

VCE = 10V, IC = 0.5A, f = 10MHz

IC = 0.5A, IB1 = 50mA, IB2 = –50mA,

VCC = 50V

min

80

45

90

typ

30

0.5

2.5

0.15

max

10

50

260

0.5

1.5

Unit

µA

V

MHz

µs

*h

FE2 Rank classification

Rank

Q

P

hFE2

90 to 180

130 to 260

TC=25°C

Ta=25

°C

Unit: mm

1:Base

2:Collector

3:Emitter

TO–220E Full Pack Package

9.9

±0.3

23

1

4.6

±0.2

2.9

±0.2

2.6

±0.1

2.54

±0.2

0.75

±0.1

1.2

±0.15

5.08

±0.4

φ3.2±0.1

1.45

±0.15

0.7

±0.1

7

°

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