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DTO35 Datasheet(PDF) 3 Page - Vishay Siliconix

Part # DTO35
Description  Surface Mounted Power Resistor Thick Film Technology
PDF  6 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

DTO35 Datasheet(HTML) 3 Page - Vishay Siliconix

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DTO35
www.vishay.com
Vishay Sfernice
Revision: 24-Oct-2019
3
Document Number: 51078
For technical questions, contact: sferfixedresistors@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
POWER RATING
The temperature of the case should be maintained within the limits specified.
CHOICE OF THE BOARD
The user must choose the board according to the working conditions of the component (power, room temperature). Maximum
working temperature must not exceed 175 °C. The dissipated power is simply calculated by the following ratio:
P:
Expressed in W
T:
Difference between maximum working temperature and room temperature
RTH (j - c): Thermal resistance value measured between resistive layer and outer side of the resistor. It is the thermal resistance
of the component: 4.28 °C/W.
RTH (c - h): Thermal resistance value measured between outer side of the resistor and upper side of the board. This is the thermal
resistance of the solder layer.
RTH (h - a): Thermal resistance of the board.
Example:
RTH (c - h) + RTH (h - a) for DTO35 power rating 3.5 W at ambient temperature +25 °C.
Thermal resistance RTH (j - c): 4.28 °C/W
Considering equation (1) we have:
T = 175 °C - 25 °C = 150 °C
RTH (j - c) + RTH (c - h) + RTH (h - a) = T/P = 150/3.5 = 42.8 °C/W
RTH (c - h) + RTH (h - a) = 42.8 °C/W - 4.28 °C/W = 38.52 °C/W
ACCIDENTAL OVERLOAD
In any case the applied voltage must be lower than the maximum overload voltage of Us = 750 V. The values indicated on the
graph below are applicable to resistors onto a board.
10
100
1000
10000
0
20
40
60
80
100
120
0
20406080
100
120
140
160
180
Axis Title
Case Temperature (°C)
175
P
T
R
TH (j - c)
R
TH (c - h)
R
TH (h - a)
++
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1
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