INA821 datasheet(6/48 Pages) TI

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7.5 Electrical Characteristics: G = 1/2 (continued)

at TA = 25°C, VS = ±2.25 V to ±18 V, VCM = VOUT = VS / 2, RL = 10 kΩ connected to ground, and REF pin connected to

ground (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

POWER SUPPLY

Quiescent current

IO = 0 mA

1.1

1.2

TA = –40°C to

+125°C

1.5

(1)

Includes effects of input bias and offset currents of amplifier.

(2)

Resistors are ratio matched but have ±20% absolute value.

(3)

Specified by wafer test to 95% confidence level.

7.6 Electrical Characteristics: G = 2

at TA = 25°C, VS = ±2.25 V to ±18 V, VCM = VOUT = VS / 2, RL = 10 kΩ connected to ground, and REF pin connected to

ground (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

OFFSET VOLTAGE (RTO)(1)

VOS

Input offset voltage

VS = ±2.25 V to ±3 V,

VCM = –1.5 V

±28

±80

µV

VS = ±3 V to ±18 V

±28

±80

dVOS/dT

Input offset voltage

drift

±1.4

±4

µV/°C

PSRR

Power-supply

rejection ratio

±1

±5

µV/V

INPUT VOLTAGE

VCM

Common-mode

voltage

VO = 0 V

3/2[(V–)–0.1]–

0.5VREF

3/2(V+)–0.5VREF

CMRR

Common-mode

rejection ratio

RTO, 1.5 [(V−) – 0.1 V)]

≤ VCM ≤ 1.5 [(V+) – 3 V]

TA = –40°C to

+125°C

RTO, 1.5 [(V+) – 1.5 V)]

≤ VCM ≤ 1.5 (V+)

TA = –40°C to

+125°C

INPUT IMPEDANCE(2)

zid

Differential

VO = 0 V

kΩ

zic

Common-mode

kΩ

GAIN

Initial

V/V

Gain error

VO = –10 V to +10 V, VS = ±15 V

±0.01

±0.03

Gain drift(3)

±0.25

±0.5 ppm/°C

Gain nonlinearity

VO = –10 V to +10 V, VS = ±15 V

ppm

OUTPUT

Output voltage

swing

Positive rail

(V+ ) – 130

(V+ ) – 180

Negative rail

(V−) + 140

(V−) + 180

ISC

Short-circuit current

±65

NOISE

Output voltage

noise

f = 0.1 Hz to 10 Hz, RTO

μVpp

Output voltage

noise density

f = 1 kHz, RTO

nV/√Hz

INA592

SBOS914F – OCTOBER 2018 – REVISED APRIL 2021

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