ACE1531A

N-Channel Enhancement Mode MOSFET

VER 1.2

1

Description

The ACE1531A is the N-Channel enhancement mode power field effect transistors are produced using

high cell density, DMOS trench technology. This high density process is especially tailored to minimize

on-state resistance and provide superior switching performance. These devices are particularly suited for

low voltage applications such as notebook computer power management and other battery powered

circuits where high-side switching, low in-line power loss and resistance to transients are needed.

Features

⚫

N-Channel

⚫

⚫

Exceptional on-resistance and maximum DC current capability

Applications

⚫

Power Management in Note book

⚫

Portable Equipment

⚫

Battery Powered System

⚫

DC/DC Converter

⚫

Load Switch

⚫

DSC

⚫

LCD Display inverter

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

20

V

Gate-Source Voltage

±12

V

Continuous Drain Current (TJ=150℃)

0.56

A

Pulsed Drain Current

3.5

A

Continuous Source Current (Diode Conduction)

0.3

A

Power Dissipation

0.15

W

Operating Junction Temperature / Storage Temperature Range

-55/150