IRF60SC241 datasheet(4/11 Pages) INFINEON

4 / 11 page

StrongIRFETª

IRF60SC241

Rev.2.2,2020-08-10

Final Data Sheet

3Electricalcharacteristics

atTj=25°C,unlessotherwisespecified

Table4Staticcharacteristics

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Drain-source breakdown voltage

V(BR)DSS

VGS=0V,ID=250uA

Breakdown voltage temperature

coefficient

dV(BR)DSS/dTj -

mV/°C

ID=5mA,referencedto25°C

Gate threshold voltage

VGS(th)

2.2

3.7

VDS=VGS,ID=250µA

Zero gate voltage drain current

IDSS

150

µA

VDS=60V,VGS=0V,Tj=25°C

VDS=60V,VGS=0V,Tj=125°C

Gate-source leakage current

IGSS

100

VGS=20V,VDS=0V

Drain-source on-state resistance

RDS(on)

0.945

1.2

1.30

Ω

VGS=10V,ID=100A

VGS=6V,ID=50A

Gate resistance

2.3

Ω

Transconductance

gfs

340

|VDS|

≥2|ID|RDS(on)max,ID=100A

Table5Dynamiccharacteristics

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Input capacitance

Ciss

16000 -

VGS=0V,VDS=30V,f=1MHz

Output capacitance

Coss

1600

VGS=0V,VDS=30V,f=1MHz

Reverse transfer capacitance

Crss

1000

VGS=0V,VDS=30V,f=1MHz

Turn-on delay time

td(on)

VDD=30V,VGS=10V,ID=30A,

RG,ext=2.7

Ω

Rise time

VDD=30V,VGS=10V,ID=30A,

RG,ext=2.7

Ω

Turn-off delay time

td(off)

227

VDD=30V,VGS=10V,ID=30A,

RG,ext=2.7

Ω

Fall time

VDD=30V,VGS=10V,ID=30A,

RG,ext=2.7

Ω

1) Defined by design. Not subject to production test.

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