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WSF2065 Datasheet(PDF) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WSF2065 Datasheet(HTML) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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1 / 5 page ![]() Description Product Summery The WSF2060 uses advanced trench technology BVDSS RDSON ID and design to provide excellent RDS(ON) with low 20V 3. 5mΩ 60A gate charge. It can be used in a wide variety of applications. General Features Application ● High density cell design for ultra low Rdson ● Power switching application ● Fully characterized avalanche voltage and current ● Hard switched ● Good stability and uniformity with high EAS ● Uninterruptible power supply ● Excellent package for good heat dissipation TO-252 Pin Configuration Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Limit Unit VDS 20 V VGS ±12 V ID 60 A ID* Drain Current-Continuous TC=100℃ 52 A IDM 3 20 A PD 83 W 0.56 W/℃ EAS 280 mJ TJ,TSTG -55 To 175 ℃ Thermal Characteristic R θJC 1.8 ℃ /W Thermal Resistance,Junction-to-Case(Note 2) Derating factor Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range Pulsed Drain Current Maximum Power Dissipation Drain Current-Continuous Gate-Source Voltage Drain-Source Voltage Parameter N-Ch MOSFET Page 1 www.winsok.tw Rev1.0 Jan.2021 WSF2065 |
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