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WSD3068DN Datasheet(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WSD3068DN Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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2 / 6 page ![]() Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V △ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.028 --- V/℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V , ID= 20A --- 4 .8 6.5 m Ω VGS=4.5V , ID= 20A --- 7.6 10 VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1. 0 --- 2.5 V △ VGS(th) VGS(th) Temperature Coefficient --- -6. 06 --- mV/℃ IDSS Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=24V , VGS=0V , TJ=55℃ --- --- 30 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ± 100 nA Qg Total Gate Charge (4.5V) VDS=15V , VGS=4.5V , ID= 20A --- 8.4 nC Qgs Gate-Source Charge --- 2.2 Qgd Gate-Drain Charge --- 3.5 Td(on) Turn-On Delay Time VDD=15V , VGen=10V , RG= 6Ω, ID=1A, RL=15Ω. --- 3.5 ns Tr Rise Time --- 5.5 Td(off) Turn-Off Delay Time --- 13.5 Tf Fall Time --- 4.6 Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 690 pF Coss Output Capacitance --- 310 Crss Reverse Transfer Capacitance --- 54 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,6 VG=VD=0V , Force Current --- --- 43 A VSD Diode Forward Voltage 2 VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V Note : Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Diode Characteristics WSD3068DN Page 2 www.winsok.tw Rev1.Apr.2019 N-Ch MOSFET --- --- --- --- --- --- --- --- --- --- A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Pulse width limited by max, junction temperature. C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating, package limited 50A. D: Pulse Test:Pulse Width≤ 300us,Duty Cyde≤ 2%. |
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